Measurement of Source Resistance in Top-Contact Organic Thin-Film Transistors

A method for measurement of source resistance in top-contact organic thin-film transistors is proposed, which uses an additional floating contact adjacent to the source to sense the channel voltage under the contact. This allows the source resistance to be directly estimated from a single device structure. Two-dimensional numerical simulation results are used to validate the proposed method. Experimental results obtained with pentacene thin-film transistors are presented to illustrate the proposed measurement technique.