Physics-based, closed-form DC model for lightly-doped short channel triple-gate MOSFETs including three-dimensional effects

In this paper, we present a compact DC model for lightly-doped, short-channel SOI triple-gate MOSFETs, which is based on an analytical solution of 3D Poisson's equation by the conformal mapping technique. Model parameters will be discussed in relation to structural and technological parameters of real devices. No fitting parameters are introduced for modeling of three-dimensional effects on the device's electrostatics, model parameters are only given by device structure. The model is in very good agreement with measurements down to 60nm and TCAD with 20nm effective channel length.