Double Enhance Dielectric Layer Electric Field high voltage SOI LDMOS

A Double Enhance Dielectric Layer Electric Field (Double ENDIF) silicon-on-insulator (SOI) LDMOS is proposed for high breakdown voltage (BV). The electric field in the buried oxide at the source and drain sides is enhance by charges in shield-trench at positive back-gate bias, resulting to improve the B V. The electric characteristic of the new structure is research by 2D MECICI. Simulation result shows that BV of the new structure reaches 1025 V at 4μm and 1μm thickness of the silicon and buried oxide layers respectively.