A high power density SiC-JFET-based matrix converter

Continuous development in semiconductor material allows designers engineers to push power density of inverter technology to new limits. The Matrix Converter topology itself, by not including the large DC-link capacitors of a typical rectifier-DC-link - Inverter topology offers an advantageous starting point in order to achieve a reliable and compact implementation of a power converter capable of working at higher operating temperatures. This paper describes the design of a Silicon Carbide JFET-based matrix converter which has been developed to reach a target of power density of 20kW/dm
³
with forced air cooling, based on Infineon Technology for the power circuit and its control.