Monolayer MoS2 transistors - ballistic performance limit analysis

Using ballistic NEGF-based transport simulations, we project the maximum performance achievable with monolayer MoS
₂
transistors. Our simulations show that these devices can provide (i) excellent switching behavior with very high ON current, (ii) a g
_m
of about 3 mS/μm, and (iii) immunity to short channel effects thanks to the electrostatistically efficient 2-D geometry. We have also investigated the effect of underlap, barrier height and contact resistance on the device performance. We note that while these numbers are representative of the best performance MoS
₂
transistors can offer, the fact that they are significantly better than those for either state-of-the-art silicon, III-V or graphene makes MoS
₂
devices promising for future electronic applications.