High-performance Ni/SiO2/Si programmable metallization cell

Resistive switching in Ni/SiO
₂
/Si programmable metallization cells was investigated. The proposed switching mechanism is the formation and dissolution of Ni filaments. Under positive bias, Ni cations migrate through SiO
₂
and are reduced at the cathode forming filaments. The filaments are dissolved by Joule-heating effect under positive or negative voltages. Promising resistive-switching characteristics, such as a large resistance ratio of ~400, excellent data retention, and good immunity to read disturbance, are also revealed.