Dielectric response of CaCu3Ti4O12 materials

The dielectric properties and its variation of CaCu
₃
Ti
₄
O
₁₂
(CCTO) materials induced by the process conditions are reviewed in this paper. On the basis of heterogeneous microstructure in ceramics and single crystal, the extrinsic Maxwell-Wagner polarization mechanism of internal barrier layer capacitance (IBLC) model is discussed adequately. According to the especial crystal structure and atomic structure, possible grain semiconducting mechanism is proposed. At the end of the paper, theoretical problems in CCTO material, Maxwell-Wagner polarization and dielectric spectroscopy analysis are analyzed.