Comparative Study of HEMTs for LNAs in Square Kilometer Array telescope

Summary form only given, as follows. A comparative study of transistors of nine prominent low noise HEMT processes is presented. The transistors include a combination of pHEMTs and mHEMTs based on GaAs and InP substrates with gate lengths ranging from 150nm to 70nm. The Square Kilometre Array telescope will require more than 30 million low noise amplifiers (LNA). Here a detailed comparative study of noise and gain indices of HEMTs of nine processes is presented with respect to power consumption and ambient temperature variation.