IC process compatible anodic electrode structures for unipolar HfOx-based RRAM

HfOx RRAM is a most promising candidate for next generation nonvolatile memory with highest endurance, speed till now but bipolar switching affects the selection of steering device, performance and applications. Bipolar and unipolar RRAMs have their advocators. Cell area of 4F
²
and/or 3D stacking for high density applications is the determining factor of preferring unipolar device. High operation power, low endurance and slow speed are most crucial issues. Recently, polarity of RRAM reported to be a strong function of top (anodic) electrode (TE) material. In this work, HfOx-based RRAM is studied by selection of TE stacking structures to find unipolar HfOx-based RRAM device structures with better performance.