Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors | IEEE Journals & Magazine | IEEE Xplore

Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors


Abstract:

This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfa...Show More

Abstract:

This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces. The role of oxide defects is discriminated thanks to the use of ionizing radiations. A dedicated RTS detection technique and several test conditions (radiation dose, temperature, integration time, photodiode bias) reveal the particularities of this novel source of RTS.
Published in: IEEE Electron Device Letters ( Volume: 32, Issue: 6, June 2011)
Page(s): 773 - 775
Date of Publication: 21 April 2011

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