The static and dynamic behaviors of resistive random access memory and its potential applications as a memristor

In this paper, the static and dynamic switching characteristics of Ti/HfO
₂
/TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also investigated the potential applications of RRAM as a memristor for both digital and analog circuit design, and discuss the feasibilities and problems to be solved.