High-Quality $\hbox{Al}_{2}\hbox{O}_{3}$ for Low-Voltage High-Speed High-Temperature (Up to 250 $^{\circ}\hbox{C}$ ) Nonvolatile Memory Technology

We report the properties of a MANAS
$(\hbox{Metal}/\break \hbox{Al}_{2} \hbox{O}_{3}/\hbox{Nitride}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{Si})$
charge-trap memory cell structure, in which both the tunnel and the blocking dielectrics are made of high-quality
$ \hbox{Al}_{2}\hbox{O}_{3}$
deposited by the molecular-atomic-deposition (MAD) technique. Compared with state-of-the-art MANOS
$(\hbox{Metal}/\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{Nitride}/\hbox{SiO}_{2}/\hbox{Si})$
and its derivatives, the MANAS structure features the following: 1) low-voltage/high-speed operation; 2) fabrication simplicity; and 3) high-temperature retention up to 250
$^{\circ}\hbox{C}$
. These superb features of the MANAS memory cell structure can be attributed to the nearly trap-free nature of the
$ \hbox{MAD}\_\hbox{Al}_{2}\hbox{O}_{3}$
, as well as its relatively high conduction band offset and low valence band offset.