Study of channel length scaling in large-scale graphene FETs

This work presents a detailed study of transport in field effect transistors using transferred graphene grown by chemical vapor deposition. For the first time, we observe a shift of Dirac point in graphene devices as a consequence of gate length scaling. This shift has been identified as one of the signatures of short channel effects in graphene. In addition, an electron-hole asymmetry observed in short channel devices suggests a strong impact from graphene/metal contacts.