Monolithic integrated MSM-2DEG PD/HEMT photoreceiver based on an identical InP/InGaAs heterostructure

A monolithic integrated photoreceiver for long-haul high-speed optoelectronic transmission systems is presented. The photoreceiver consists of a MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. The design considerations, preparation procedure and optoelectronic properties of discrete devices as well as results on receiver circuits are presented. The MSM-2DEG photodetector exhibits a 0.21A/W responsivity and a 16GHz bandwidth. The HEMT amplifiers have 45/85GHz f/sub T//f/sub max/. A 7GHz bandwidth and 100V/W responsivity is measured on an inductive tuned front-end receiver.