Extraction of Effective Oxide Thickness for SOI FINFETs With High- $\kappa$/Metal Gates Using the Body Effect

A methodology based on the transistor body effect is used to monitor inversion oxide thicknesses (T
_inv's
) in high-κ/metal-gate undoped ultrathin-body short-channel SOI FINFETs. The extracted T
_inv's
are benchmarked to independent capacitance-voltage (C-V) measurements. For the first time, device simulation is introduced to understand the fundamental difference in T
_inv
values extracted using the two techniques, which is driven by the inversion charge centroid at different bias conditions.