Noise of GaAs Diodes

By comparing experimental and modelled noise results of a n
^*
nn
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GaAs diode, we show that the lack of precise knowledge on the variation of the diffusion coefficient D(E), versus the electric field E. may lead to erroneous predictions, in particular as concerning the noise behaviour of GaAs devices. The electric field and free carrier density profiles are also studied in Gunn oscillation operating regime.