A 1.1e- temporal noise 1/3.2-inch 8Mpixel CMOS image sensor using pseudo-multiple sampling

The noise performance of CMOS image sensors has improved significantly. The most popular way to reduce readout circuit noise is amplifying pixel output using a preamplifier at the foremost stage of readout chain to suppress the noise of following readout chains in high analog gain [1–3]. Another approach is multiple sampling which can reduce temporal noise of pixel and readout circuit by sampling the same pixel repeatedly and processing (generally averaging) the sampled data [4, 5]. However, both approaches require additional circuitry in the column readout chain which requires extra silicon area and power consumption. Furthermore, it is hard to implement a decent per-column amplifier in a small pixel pitch sensor, such as 1.4µm pixel, because of narrow layout space. In addition, the second approach requires longer readout time proportional to the number of samples. This paper presents a cost-effective low noise CMOS image sensor readout chain using pseudo-multiple sampling technique.