High Performance Deep-Submicron Inversion-Mode InGaAs MOSFETs with maximum Gm exceeding 1.1 mS/µm: New HBr pretreatment and channel engineering

High performance deep-submicron inversion-mode InGaAs MOSFET with ALD Al
₂
O
₃
as gate dielectric has been demonstrated. Transistors with gate lengths down to 150 nm have been fabricated and characterized. Record high extrinsic transconductance of 1.1 mS/μm has been achieved at V
_ds
= 2.0 V with 5 nm Al
₂
O
₃
as gate dielectric. G
_m
can be further improved to 1.3 mS/μm by reducing the gate oxide thickness to 2.5 nm at V
_ds
= 1.6 V. HBr pre-treatment, retro-grade structure and halo-implantation processes are introduced for the first time into III-V MOSFET to further improve high-k/InGaAs interface quality and on-state/off-state performance of the devices. The key transistor scaling metrics such as S.S., DIBL, V
_T
of these treated devices are compared with the controlled devices with channel lengths from 250 nm to 150 nm.