Two-dimensional model for the potential profile in a short channel Schottky barrier DG-FET

In here we present a way to calculate the electrostatic potential of Schottky barrier double-gate MOSFETs (SB-DG-MOSFET) in subthreshold region. Due to increasing source/drain (S/D) parasitic resistance, gate oxide leakage and degraded device performance caused by short channel effects (SCE) the technological limits for standard bulk will be reached soon. Therefore substantial changes regarding device technologies and different structures such as Schottky barrier (SB) MOSFETs or multi-gate MOSFETs are necessary. The SB-MOSFET structure is chosen, because its metallic S/D electrodes consists of low specific resistance, high scalability even down to the sub-10nm region and good process compability with current standard Si technologies.