Electrical characterization of Cr / p-ZnO Schottky contacts grown by pulsed laser deposition (PLD) on Si substrate

ZnO is an attractive wide band gap semiconductor and a promising material for transparent electronic applications such as short-wavelength LEDs, lasers and UV detectors because it can be obtained chemically stable and easily deposited on different semiconductor substrates (Si, InGaAs, GaAs). The use of ZnO in variety of applications is mainly due to its important properties of a direct band gap with an energy gap of 3.37 eV at RT and a large exciton binding energy of 60 meV.