Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

SiGe/Si core/shell nanowire (NW) devices are promising candidates for the future generation MOSFETs providing better channel control and hole mobility. These core-shell devices can be exploited both as p- and n-type devices. The Si shell improves the semiconductor-oxide interface and enhances the device performances. The Germanium condensation technique is able to provide high Ge content (>50%) channel with Si as capping layer. In this work we investigate the viability of using these core/shell NWFETs for CMOS application.