Programming characteristics of the steep turn-on/off feedback FET (FBFET)

The feedback FET is a new steep turn-on/off transistor which achieves six-orders-of-magnitude current change within a 2mV gate voltage step (0.35mV/decade). This device requires an initial programming or conditioning step. Its threshold voltage may be adjusted by Fowler-Nordheim or hot-canier charge injection. Progranuning and operation of the device is explained with simulation and experimental data.