Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique

The interface trap density of fresh TiN/TaN gated HfO
₂
/SiO
₂
/Si/epi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. The bias temperature stress induced interface trapped charge and oxide trapped charge shifts are also systematically investigated in this work.