In-situ Ga/sub 2/O/sub 3/ process for GaAs inversion/accumulation device and surface passivation applications

In-situ deposition of Ga/sub 2/O/sub 3/ films on clean, atomically ordered (100) GaAs surfaces has been investigated. Unique Ga/sub 2/O/sub 3/-GaAs interface properties including an interface state density in the mid 10/sup 10/ cm/sup -2/ eV/sup -1/ range and an interface recombination velocity of 4500 cm/s have been demonstrated. The formation of inversion layers in both n- and p-type GaAs has been clearly established. The Ga/sub 2/O/sub 3/-GaAs interface is characterized by thermodynamic and photochemical stability.