Quantum compact model for ballistic double gate MOSFETs

A proposed compact model including quantum confinement and drain induced barrier lowering (DIBL) based on the calculation of charge and injection velocity is presented. The model used a single expression for current calculation in all regions to ensure the continuity of the model over all regions of operation. The model succeeded to simulate the ballistic double gate (DG) nano MOSFETs from linear to saturation regions of operation. The validation of the model was done by comparison with the standard NANOMOS numerical simulation. The error in the saturation region is about 6% and does not exceed 10% in the linear region.