Multi-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET

Through a combination of measurement techniques, we study the interface properties of In
_0.65
Ga
_0.35
As transistor with ALD deposited Al
₂
O
₃
gate dielectric. We show that the interface trap density at In
_0.65
Ga
_0.35
As/Al
₂
O
₃
interface can be relatively high, but the transistor still exhibits inversion characteristics. A detailed profiling of the interface traps shows that majority of the interface traps are donor-like, and explains the absence of Fermi level pinning in spite of the high interface trap density.