The computational intelligence in simulation of DG MOSFET: Application to the simulation of the nanoscale CMOS circuit

In this paper, the simulation of DG MOSFET based on ANFIS and ANN models are carried out and their results are compared. These models can reduce the computational time while keeping the accuracy of physics-based models, like non-equilibrium Greenpsilas function (NEGF) formalism. The compact models with computational intelligent allow for fast and accurate system level simulation of the nanoscale circuits.