New model of ultra short symmetric double gate MOSFET

This paper presents a new model for ultra short symmetric double gate MOSFET with gate lengths in the 10 nm to 50 nm range. A non-charge sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this model using the Surface Potential Plus (SPP) approach. The model is based on Cheming Hu model in solving the Poisson equation in the term of the electron concentration rather than surface potential. In this model, physical representation for the transistor channel region is combined with empirical fitting parameters that accurately model the variation of gate and drain voltages in such small dimensions. The results of the model is validated through the two dimensional simulations of the device simulator (NanoMos). The model gives very accurate results with 1.1% average error percentage and 1.9% maximum error percentage. Moreover, the model achieves a very high performance in terms of speed without any problem in convergence.