Performance enhancement of the tunnel field effect transistor using a SiGe source

Due to extremely low off state current (I
_OFF
) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (I
_ON
) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in I
_ON
compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.