Influence of wave function penetration on short channel effects in nanoscale double gate MOSFETs

Influence of wave function penetration on short channel effects (SCEs) in nanoscale double gate (DG) MOSFETs are examined. Wave function penetration effects result in degradation of off-state current and reduction of threshold voltage in DG MOSFETs. Effects of wave function penetration on subthreshold swing and drain induced barrier lowering are insignificant.