Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

This paper shows ultra-low contact resistivities with standard NiPt silicide process that can reach below 10
^-8
Omega-cm
²
for both n
⁺
and p
⁺
Si and demonstrates that NiPt silicide can fulfill CMOS technology requirements down to the ITRS 22 nm node.