Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current

This work demonstrates that the 2× mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190nm poly-pitch for devices under compressive stress. (110) PMOS with 3.5GPa compressively stressed liners demonstrate strong channel drives with I
on
=800 μA/μm at I
off
=100nA/μm (V
dd
=1.0V) for 190nm poly-pitch, the highest reported to date for 45-nm-node (110) PMOS using conventional gate dielectrics without eSiGe stressors. Additionally, (110) PMOS show better scalability, with 15% smaller total I
on
degradation than (100) PMOS when poly-pitch scales from 250nm to 190nm.