Nanoscale Resistive Memory Device Using SrTiO3 Films

Resistive-oxide memory cells based on polycrystalline films of Cr-doped SrTiO
₃
have been investigated with regard to next-generation non-volatile memory. Crosspoint cells with an area of 200 × 200nm
²
show fast write and erase times (≤ 100ns), endure 10
⁵
programming cycles and can be programmed with low currents (< 100μA). The weak area dependence of the write and erase current give rise to desirable scaling properties.