Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection

A new charge detection method in which the off-state current is used to detect charge stored near to the drain is demonstrated for dual-bit SONOS FinFET NVM cells for the first time. This method is very sensitive to charge stored near to the drain electrode and thus can facilitate gate-length scaling of dual-bit SONOS NVM devices.