A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and inverse F, given particular operating conditions for this device, are made