Characteristics of InGaN Channel HEMTs Grown by MOCVD

The AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) structure was grown by metal organic chemical vapor deposition (MOCVD) on (0001) sapphire substrates. The electron transport properties were investigated by variable temperature Hall effect measurements. The fabricated devices with gate length of 0.8mum and gate width of 120 mum show a transconductance of 136mS/mm and maximum drain current of 435mA/mm. The small signal properties were also achieved with the current gain cut-off frequency (f
_T
) of 5.8GHz and the maximum frequency of oscillation (f
_MAX
) of 17GHz