Double-Gate FET Technology for RF Applications: Device Characteristics and Low Noise Amplifier Design

Previous works have established that double-gate FET (DGFET) technology provides improved digital circuit performance relative to bulk CMOS (Nowak et al., 2004) and (Kim et al., 2005). However, the benefits of DGFET technology for analog/RF circuits have not been thoroughly analyzed. In this work, we use two-dimensional, mixed-mode simulations to compare the performance of low noise amplifier (LNA) circuits built using DGFET and bulk CMOS devices