HiSIM2 Circuit simulation - Solving the speed versus accuracy crisis

The development trend in compact modeling goes toward surface-potential-based approaches and leads to models like HiSIM2, with higher accuracy, fewer model parameters, and shorter computer runtime than achievable with the conventional threshold-voltage-based approaches. The main motivation for continuing this development effort is to realize a sufficient design capability of RF circuits with advanced MOSFETs, where many higher-order phenomena affect the circuit performance, as well as of large mixed-signal circuits, where both accuracy and short simulation time are a must. The trend toward the surface potential brings compact modeling for circuit simulation also much closer to 2D and three-dimensional numerical device simulation. Therefore, both approaches can now come together and work united to achieve the common goal of realizing rapid technology progress for the benefit of the society