Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model | IEEE Journals & Magazine | IEEE Xplore

Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model


Abstract:

A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it...Show More

Abstract:

A new model description for the behaviour of epitaxial collectors in bipolar transistors is given. This is part of MEXTRAM, a compact model for circuit simulation, and it gives the voltage drop and stored minority carrier charge in the collector epilayer as a function of the bias conditions. It covers (total) depletion and quasi-saturation for both ohmic and space charge conditions in the end region of the epilayer. New features are that the collector current and stored charge are given as explicit analytical functions, thus guaranteeing continuity also for their derivatives, and that collector current spreading is taken into account.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 42, Issue: 2, February 1995)
Page(s): 274 - 282
Date of Publication: 06 August 2002

ISSN Information:


Contact IEEE to Subscribe

References

References is not available for this document.