Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds

The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH/sub 3/). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP).<
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