An SPDD p-MOSFET structure suitable for 0.1 and sub 0.1 micron channel length and its electrical characteristics

A new solid-phase diffused drain (SPDD) structure has been developed for 0.1 and sub-0.1 um p-MOSFET technology. Highly doped ultra-shallow p/sup +/ source and drain junctions were achieved by solid-phase diffusion from the highly doped BSG sidewall. The extremely shallow and high concentration drain profile significantly improved short channel effects without increasing parasitic resistance. The excellent electrical characteristics and good hot-carrier reliability of the SPDD p-MOSFET are demonstrated.<
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