SOI device structures implementing 650 V high voltage output devices on VLSIs

It has been experimentally verified that 650 V breakdown voltage can be realized in lateral devices on a 14- mu m-thick SOI (silicon on insulator). The device structure is characterized by a shallow N-type diffusion layer on a 3- mu m-thick bottom oxide film. Trenches will be available for device isolation by using a thin SOI film for a power IC. The combination of high-voltage thin SOI device structures and the trench isolation technique will make VLSIs with high-voltage output devices possible.<
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