/sup 4/He, /sup 12/C and /sup 63/Cu ions effect simulation on silicon diode

The effect of 5 MeV alpha particles, 30 MeV /sup 12/C ions and 70 MeV /sup 63/Cu ions on a large area silicon P/sup +/N diode is simulated. Computer simulation is performed in 3D axisymmetric geometry with the device simulator ACCES. The effect of high LET particles with short track is compared to the effect of low LET particles with long track. The diffusion component of the collected charge is shown to be important for the three particles in this large area 10 V reverse-biased diode.<
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