An integrated air-gap-capacitor pressure sensor and digital readout with sub-100 attofarad resolution

The fabrication and characterization of an integrated air-gap-capacitor pressure sensor are presented. The capacitor fabrication process uses standard IC processing to create NMOS circuits, and an added polysilicon layer to create poly-to-n/sup +/ capacitors with a 0.6- mu m-thick dielectric using deposited oxide. Subsequent processing is used to produce deformable, parallel-plate, air-gap capacitors on the front side alongside MOS circuits. Sensor chips are fabricated using 100- mu m*100- mu m, 100-fF air-gap capacitors with on-chip circuitry. The sensor chip is a part of a capacitive measurement system that uses a charge-redistribution sense technique to achieve very high capacitance resolution. The behavior of the pressure sensor chips was studied as a function of applied pressure in the 0-240-kPa (0-35-psi) range. Measurements indicate a sensitivity of 0.93 mV/kPa (6.40 mV/psi) with a deflection of 10 nm/kPa (70 nm/psi) at 0-69 kPa (0-10 psi). Standard deviations indicate a static pressure resolution of 0.54 kPa (0.078 psi), which translates to 30 attofarads at a sampling frequency of 11 kHz.<
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