Integration and Performance of Schottky Junction SOI Devices

This paper demonstrates the successful integration of Schottky-barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB-MOSFETs are shown to steadily progress with respect to conventional highly-doped S/D with a current drive (I
_on
) of 325-425 muA/mum, an off-state current (I
_off
) of 14-368 muA/mum at -2 V for 100-40 nm physical gate lengths, respectively