DC-65 GHz characterization of nanocrystalline diamond leaky film for reliable RF MEMS switches

This paper reports on the growth, patterning, and characterization of plasma-enhanced chemical vapor deposition (PECVD) thin diamond film for DC-65 GHz applications. Nanocrystalline films are successfully demonstrated with an average grain size of less than 60 nm that can replace conventional low-quality dielectrics in RF MEMS switches. In addition to their excellent surface properties, the diamond film has negligible RF loss up to at least 65 GHz, but non-zero DC conductivity of approximately 0.2 /spl mu/S/m that allows the film to provide a conductive path for potential trapped charges. Such films are envisioned to be integrated in today's capacitive RF MEMS switches that suffer from charge-induced stiction.