On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, J
_th
, is high due to non-radiative recombination accounting for 90% J
_th
near room temperature. This also gives rise to low T
₀
values ~60 K close to room temperature, similar to that for InGaAsP/InP