Modeling of vertical and lateral phototransistors using VHDL-AMS

In this paper, to be able to simulate imaging systems containing APS cells including phototransistors, an electric model based on a physical approach was elaborated and it was written in the VHDL-AMS language. It allows the simulation of the spectral response of phototransistors sensibilities and the study of their linearity according to the power of the incident light.