Lucky-electron model of channel hot electron emission

The lucky electron model proposes that an electron is emitted into SiO
2
by first gaining enough energy without suffering an energy stripping collision in the channel and then being redirected toward the Si/SiO
2
interfact. A closed-form expression for the gate current has successfully reproduced the dependence on V
g
,V
d
and L. This model also suggests a straightforward correlation with the substrate current. By measuring the substrate current one may be able to replace or supplement long-term stress test for studying a component of channel hot electron emission that causes instability but does not show up in the gate current. The lucky electron model suggests that the channel hot electron effect would be negligible if V
d
-V
s
is less than 2.5 volt no matter how small the channel length or junction depth.