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Lead—Lead telluride Schottky-barrier microstrip | IEEE Journals & Magazine | IEEE Xplore

Lead—Lead telluride Schottky-barrier microstrip


Abstract:

Observations of some interesting properties of the II-VI semiconductor PbTe result in the realization of a Pb-PbTe Schottky-barrier microstrip having a slowing factor as ...Show More

Abstract:

Observations of some interesting properties of the II-VI semiconductor PbTe result in the realization of a Pb-PbTe Schottky-barrier microstrip having a slowing factor as large as 450 for propagating electromagnetic waves. The properties of PbTe are briefly described, and the key features that produce a large slowing factor are explained. The theory of device operation at cryogenic temperatures is presented, along with details of device fabrication and actual device performance.
Published in: IEEE Transactions on Electron Devices ( Volume: 26, Issue: 6, June 1979)
Page(s): 970 - 976
Date of Publication: 30 June 1979

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